STGYA120M65DF2AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 650V 160A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 202 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/185ns
Switching Energy: 1.8mJ (on), 4.41mJ (off)
Test Condition: 400V, 120A, 4.7Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 625 W
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.28 EUR |
| 10+ | 7.75 EUR |
| 100+ | 7.31 EUR |
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Technische Details STGYA120M65DF2AG STMicroelectronics
Description: IGBT TRENCH FS 650V 160A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 202 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A, Supplier Device Package: MAX247™, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 66ns/185ns, Switching Energy: 1.8mJ (on), 4.41mJ (off), Test Condition: 400V, 120A, 4.7Ohm, 15V, Gate Charge: 420 nC, Part Status: Active, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 625 W.
Weitere Produktangebote STGYA120M65DF2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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STGYA120M65DF2AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGYA120M65DF2AG - IGBT, 160 A, 1.65 V, 625 W, 650 V, MAX-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 625W Bauform - Transistor: MAX-247 Anzahl der Pins: 3Pin(s) Produktpalette: M Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 160A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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STGYA120M65DF2AG | Hersteller : STMicroelectronics |
IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGYA120M65DF2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 160A 625W Automotive 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STGYA120M65DF2AG | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 160A 625W Automotive 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STGYA120M65DF2AG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 625W; MAX247; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 625W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 420nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGYA120M65DF2AG | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 625W; MAX247; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 120A Power dissipation: 625W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 420nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry |
Produkt ist nicht verfügbar |