STGYA50H120DF2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/284ns
Switching Energy: 2mJ (on), 2.1mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 535 W
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.01 EUR |
| 10+ | 6.16 EUR |
| 30+ | 6.05 EUR |
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Technische Details STGYA50H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 340 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/284ns, Switching Energy: 2mJ (on), 2.1mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.
Weitere Produktangebote STGYA50H120DF2 nach Preis ab 6.16 EUR bis 13.48 EUR
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 1200 V 50 A high-speed H series IGBT |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Collector current: 50A Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 200A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 535W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Collector current: 50A Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 200A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Mounting: THT Collector-emitter voltage: 1.2kV Type of transistor: IGBT Power dissipation: 535W Kind of package: tube |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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STGYA50H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGYA50H120DF2 - IGBT, 100 A, 2.1 V, 535 W, 1.2 kV, MAX-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 535W Bauform - Transistor: MAX-247 Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe Trench H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 100A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGYA50H120DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 100A 535mW 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |