STGYA50H120DF2 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.44 EUR |
| 10+ | 8.02 EUR |
| 120+ | 7.02 EUR |
| 510+ | 6.83 EUR |
| 1020+ | 6.43 EUR |
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Technische Details STGYA50H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 340 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/284ns, Switching Energy: 2mJ (on), 2.1mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.
Weitere Produktangebote STGYA50H120DF2 nach Preis ab 6.85 EUR bis 11.47 EUR
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STGYA50H120DF2 | STMicroelectronics |
 Description: IGBT TRENCH FS 1200V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/284ns Switching Energy: 2mJ (on), 2.1mJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 535 W |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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STGYA50H120DF2 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGYA50H120DF2 - IGBT, 100 A, 2.1 V, 535 W, 1.2 kV, MAX-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 535W Bauform - Transistor: MAX-247 Dauerkollektorstrom: 100A Anzahl der Pins: 3Pin(s) Produktpalette: Produktreihe Trench H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 360 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGYA50H120DF2 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/284ns
Switching Energy: 2mJ (on), 2.1mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 535 W
Description: IGBT TRENCH FS 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/284ns
Switching Energy: 2mJ (on), 2.1mJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 535 W
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.47 EUR |
| 10+ | 8.82 EUR |
| 30+ | 8.04 EUR |
| 120+ | 7.34 EUR |
| 270+ | 7.04 EUR |
| 510+ | 6.85 EUR |
| STGYA50H120DF2 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGYA50H120DF2 - IGBT, 100 A, 2.1 V, 535 W, 1.2 kV, MAX-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.1V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 535W
Bauform - Transistor: MAX-247
Dauerkollektorstrom: 100A
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe Trench H
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STGYA50H120DF2 - IGBT, 100 A, 2.1 V, 535 W, 1.2 kV, MAX-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.1V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 535W
Bauform - Transistor: MAX-247
Dauerkollektorstrom: 100A
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe Trench H
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)