STH10N80K5-2AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.9 EUR |
| 10+ | 5.79 EUR |
| 100+ | 4.69 EUR |
| 500+ | 4.17 EUR |
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Technische Details STH10N80K5-2AG STMicroelectronics
Description: MOSFET N-CH 800V 8A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STH10N80K5-2AG nach Preis ab 5.3 EUR bis 10.27 EUR
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STH10N80K5-2AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 800V, 0.60 Ohm 8A MDmesh K5 Power MOSFET |
auf Bestellung 987 Stücke: Lieferzeit 14-28 Tag (e) |
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STH10N80K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 8A Automotive 3-Pin(2+Tab) H2PAK T/R |
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| STH10N80K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 8A Automotive 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH10N80K5-2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 8A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |