STH10N80K5-2AG STMicroelectronics

Description: MOSFET N-CH 800V 8A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.