STH170N8F7-2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 120A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 5+ | 4.1 EUR |
| 10+ | 3.06 EUR |
| 25+ | 2.8 EUR |
| 100+ | 2.51 EUR |
| 250+ | 2.38 EUR |
| 500+ | 2.29 EUR |
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Technische Details STH170N8F7-2 STMicroelectronics
Description: MOSFET N-CH 80V 120A H2PAK-2, Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STH170N8F7-2 nach Preis ab 2.73 EUR bis 6.83 EUR
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STH170N8F7-2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 80 V, 0.0028 Ohm typ 120 A STripFET F7 Power MOSFET |
auf Bestellung 536 Stücke: Lieferzeit 10-14 Tag (e) |
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STH170N8F7-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 120A H2PAK-2 Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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