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STH170N8F7-2

STH170N8F7-2 STMicroelectronics

sth170n8f7_2-1851190.pdf Hersteller: STMicroelectronics
MOSFETs N-channel 80 V, 0.0028 Ohm typ 120 A STripFET F7 Power MOSFET
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.83 EUR
10+4.84 EUR
25+4.42 EUR
100+3.84 EUR
250+3.63 EUR
500+3.26 EUR
1000+2.73 EUR
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Technische Details STH170N8F7-2 STMicroelectronics

Description: MOSFET N-CH 80V 120A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V.

Weitere Produktangebote STH170N8F7-2 nach Preis ab 2.87 EUR bis 7.20 EUR

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STH170N8F7-2 STH170N8F7-2 Hersteller : STMicroelectronics en.DM00117288.pdf Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.20 EUR
10+4.76 EUR
25+4.13 EUR
100+3.43 EUR
250+3.08 EUR
500+2.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STH170N8F7-2 STH170N8F7-2 Hersteller : STMicroelectronics en.DM00117288.pdf Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
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Im Einkaufswagen  Stück im Wert von  UAH