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STH210N75F6-2

STH210N75F6-2 STMicroelectronics


dm00025940.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 75V 180A 3-Pin(2+Tab) H2PAK T/R
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Technische Details STH210N75F6-2 STMicroelectronics

Description: MOSFET N-CH 75V 180A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: H2Pak-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V.

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STH210N75F6-2 STH210N75F6-2 Hersteller : STMicroelectronics STH210N75F6-2.pdf Description: MOSFET N-CH 75V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
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STH210N75F6-2 STH210N75F6-2 Hersteller : STMicroelectronics STH210N75F6-2.pdf Description: MOSFET N-CH 75V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
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STH210N75F6-2 STH210N75F6-2 Hersteller : STMicroelectronics en.DM00025940-1223289.pdf MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI
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