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STH240N10F7-2

STH240N10F7-2 STMicroelectronics


en.DM00111318.pdf Hersteller: STMicroelectronics
MOSFETs N-channel 100 V, 0.002 Ohm typ 180 A STripFET F7 Power MOSFET
auf Bestellung 940 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.96 EUR
10+6.92 EUR
100+3.63 EUR
500+3.2 EUR
1000+2.76 EUR
2000+2.59 EUR
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Technische Details STH240N10F7-2 STMicroelectronics

Description: MOSFET N-CH 100V 180A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V.

Weitere Produktangebote STH240N10F7-2 nach Preis ab 3.46 EUR bis 3.46 EUR

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STH240N10F7-2 STH240N10F7-2 Hersteller : STMicroelectronics 1903742174443259dm001.pdf Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
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STH240N10F7-2 Hersteller : STMicroelectronics en.DM00111318.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 300W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.46 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STH240N10F7-2 Hersteller : STMicroelectronics 1903742174443259dm001.pdf Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH240N10F7-2 STH240N10F7-2 Hersteller : STMicroelectronics en.DM00111318.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH240N10F7-2 STH240N10F7-2 Hersteller : STMicroelectronics en.DM00111318.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH