STH240N10F7-2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 pac
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.96 EUR |
| 10+ | 6.92 EUR |
| 100+ | 3.63 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.75 EUR |
| 2000+ | 2.59 EUR |
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Technische Details STH240N10F7-2 STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V.
Weitere Produktangebote STH240N10F7-2 nach Preis ab 3.46 EUR bis 3.46 EUR
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STH240N10F7-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STH240N10F7-2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 180A; 300W; D2PAK,TO263AB; SMT Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: D2PAK; TO263AB Gate-source voltage: 20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhancement Electrical mounting: SMT Technology: MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STH240N10F7-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH240N10F7-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V |
Produkt ist nicht verfügbar |
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STH240N10F7-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V |
Produkt ist nicht verfügbar |