STH270N8F7-6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details STH270N8F7-6 STMicroelectronics
Description: STMICROELECTRONICS - STH270N8F7-6 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0021 ohm, H2PAK-6, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 180A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.5V, Verlustleistung: 315W, SVHC: No SVHC (05-Nov-2025), Bauform - Transistor: H2PAK-6, Anzahl der Pins: 7Pin(s), Produktpalette: STripFET F7 Series, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0021ohm.
Weitere Produktangebote STH270N8F7-6 nach Preis ab 3.71 EUR bis 12.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STH270N8F7-6 | STMicroelectronics |
MOSFETs N-CH 80V 17mOhm 180A STripFET VII |
auf Bestellung 1883 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
STH270N8F7-6 | STMicroelectronics |
Description: MOSFET N-CH 80V 180A H2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
STH270N8F7-6 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STH270N8F7-6 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0021 ohm, H2PAK-6, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 180A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 315W SVHC: No SVHC (05-Nov-2025) Bauform - Transistor: H2PAK-6 Anzahl der Pins: 7Pin(s) Produktpalette: STripFET F7 Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0021ohm |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
|
| STH270N8F7-6 |
|
Hersteller: STMicroelectronics
MOSFETs N-CH 80V 17mOhm 180A STripFET VII
MOSFETs N-CH 80V 17mOhm 180A STripFET VII
auf Bestellung 1883 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.84 EUR |
| 10+ | 6.39 EUR |
| 100+ | 4.61 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 3.71 EUR |
| STH270N8F7-6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.58 EUR |
| 100+ | 4.7 EUR |
| 500+ | 4.19 EUR |
| STH270N8F7-6 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STH270N8F7-6 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0021 ohm, H2PAK-6, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 180A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.5V
Verlustleistung: 315W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: H2PAK-6
Anzahl der Pins: 7Pin(s)
Produktpalette: STripFET F7 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0021ohm
Description: STMICROELECTRONICS - STH270N8F7-6 - Leistungs-MOSFET, n-Kanal, 80 V, 180 A, 0.0021 ohm, H2PAK-6, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 180A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.5V
Verlustleistung: 315W
SVHC: No SVHC (05-Nov-2025)
Bauform - Transistor: H2PAK-6
Anzahl der Pins: 7Pin(s)
Produktpalette: STripFET F7 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0021ohm
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 12.15 EUR |
| 31+ | 7.52 EUR |