Produkte > STMICROELECTRONICS > STH270N8F7-6
STH270N8F7-6

STH270N8F7-6 STMicroelectronics

en.DM00071594.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+6.39 EUR
2000+ 6.02 EUR
Mindestbestellmenge: 1000
Produktrezensionen
Produktbewertung abgeben

Technische Details STH270N8F7-6 STMicroelectronics

Description: MOSFET N-CH 80V 180A H2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V, Power Dissipation (Max): 315W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: H2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V.

Weitere Produktangebote STH270N8F7-6 nach Preis ab 7.47 EUR bis 13.68 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STH270N8F7-6 STH270N8F7-6 Hersteller : STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.38 EUR
10+ 10.39 EUR
100+ 8.4 EUR
500+ 7.47 EUR
Mindestbestellmenge: 3
STH270N8F7-6 STH270N8F7-6 Hersteller : STMicroelectronics sth270n8f7_2-1850909.pdf MOSFET N-CH 80V 17mOhm 180A STripFET VII
auf Bestellung 1967 Stücke:
Lieferzeit 741-755 Tag (e)
Anzahl Preis ohne MwSt
4+13.68 EUR
10+ 12.32 EUR
25+ 11.65 EUR
100+ 10.09 EUR
500+ 8.61 EUR
1000+ 7.54 EUR
Mindestbestellmenge: 4
STH270N8F7-6 STH270N8F7-6 Hersteller : STMicroelectronics sth270n8f7-6.pdf Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) H2PAK T/R
Produkt ist nicht verfügbar