Produkte > STMICROELECTRONICS > STH275N8F7-6AG
STH275N8F7-6AG

STH275N8F7-6AG STMicroelectronics


en.DM00149381.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.12 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STH275N8F7-6AG STMicroelectronics

Description: MOSFET N-CH 80V 180A H2PAK-6, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V, Power Dissipation (Max): 315W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2PAK-6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote STH275N8F7-6AG nach Preis ab 4.42 EUR bis 9.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STH275N8F7-6AG STH275N8F7-6AG Hersteller : STMicroelectronics en.DM00149381.pdf Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.99 EUR
10+6.33 EUR
100+5.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STH275N8F7-6AG STH275N8F7-6AG Hersteller : STMicroelectronics sth275n8f7_2ag-1851098.pdf MOSFETs Automotive-grade N-channel 80 V, 1.7 mOhm typ 180 A STripFET F7 Power MOSFET in
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.08 EUR
10+6.39 EUR
25+6.37 EUR
100+4.77 EUR
500+4.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STH275N8F7-6AG STH275N8F7-6AG Hersteller : STMicroelectronics 45718319287029039.pdf Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH