STH2N120K5-2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 1200 V, 7.25 Ohm typ 1.5 A MDmesh K5 Power MOSFET
auf Bestellung 922 Stücke:
Lieferzeit 108-112 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 6.07 EUR |
| 25+ | 5.97 EUR |
| 100+ | 4.93 EUR |
| 250+ | 4.84 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 3.73 EUR |
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Technische Details STH2N120K5-2AG STMicroelectronics
Description: MOSFET N-CH 1200V 1.5A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STH2N120K5-2AG nach Preis ab 3.91 EUR bis 8.17 EUR
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STH2N120K5-2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1200V 1.5A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 634 Stücke: Lieferzeit 10-14 Tag (e) |
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STH2N120K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 1.5A Automotive 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 12753 Stücke: Lieferzeit 14-21 Tag (e) |
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| STH2N120K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 1.5A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH2N120K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 1.5A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH2N120K5-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 1.5A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| STH2N120K5-2AG | Hersteller : STMicroelectronics |
STH2N120K5-2AG SMD N channel transistors |
Produkt ist nicht verfügbar |
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STH2N120K5-2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1200V 1.5A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |