STH315N10F7-6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details STH315N10F7-6 STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V, Power Dissipation (Max): 315W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2PAK-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STH315N10F7-6 nach Preis ab 3.83 EUR bis 9.73 EUR
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STH315N10F7-6 | STMicroelectronics |
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STH315N10F7-6 | STMicroelectronics |
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STH315N10F7-6 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2PAK-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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STH315N10F7-6 | STMicroelectronics |
MOSFETs Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET |
auf Bestellung 2046 Stücke: Lieferzeit 10-14 Tag (e) |
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| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 180A; 315W; TO263-7 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STH315N10F7-6 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.05 EUR |
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.06 EUR |
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.64 EUR |
| 10+ | 6.39 EUR |
| 100+ | 4.56 EUR |
| 500+ | 4.05 EUR |
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
MOSFETs Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
auf Bestellung 2046 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.73 EUR |
| 10+ | 6.47 EUR |
| 100+ | 4.84 EUR |
| 500+ | 4.11 EUR |
| 1000+ | 4.08 EUR |
| 2000+ | 3.83 EUR |
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 315W; TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 315W; TO263-7
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.63 EUR |