auf Bestellung 716 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 13.21 EUR |
| 10+ | 11.08 EUR |
| 25+ | 10.48 EUR |
| 100+ | 8.97 EUR |
| 250+ | 8.48 EUR |
| 500+ | 7.98 EUR |
| 1000+ | 6.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STH3N150-2 STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: H2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V.
Weitere Produktangebote STH3N150-2 nach Preis ab 6.79 EUR bis 13.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STH3N150-2 | Hersteller : STMICROELECTRONICS |
 Description: STMICROELECTRONICS - STH3N150-2 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, OberflächenmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 1.5kV rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm |
auf Bestellung 45700 Stücke: Lieferzeit 14-21 Tag (e) |
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STH3N150-2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STH3N150-2 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 2.5 A, 6 ohm, H2PAK-2, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 1.5kV rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 140W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm |
auf Bestellung 45700 Stücke: Lieferzeit 14-21 Tag (e) |
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STH3N150-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 4088 Stücke: Lieferzeit 14-21 Tag (e) |
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| STH3N150-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1500V 2.5A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: H2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V |
auf Bestellung 1950 Stücke: Lieferzeit 21-28 Tag (e) |
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| STH3N150-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1500V 2.5A H2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: H2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V |
auf Bestellung 1950 Stücke: Lieferzeit 21-28 Tag (e) |
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| STH3N150-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 11000 Stücke: Lieferzeit 14-21 Tag (e) |
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STH3N150-2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 86W Polarisation: unipolar Technology: STripFET™ II Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STH3N150-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH3N150-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH3N150-2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 86W Polarisation: unipolar Technology: STripFET™ II Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |