STH410N4F7-2AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 40V 200A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 4.78 EUR |
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Technische Details STH410N4F7-2AG STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STH410N4F7-2AG nach Preis ab 4.82 EUR bis 11.37 EUR
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 |
auf Bestellung 969 Stücke: Lieferzeit 10-14 Tag (e) |
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 365W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| STH410N4F7-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |