STH410N4F7-2AG STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 365W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1000+ | 4.41 EUR |
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Technische Details STH410N4F7-2AG STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-2, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 365W (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STH410N4F7-2AG nach Preis ab 4.44 EUR bis 10.56 EUR
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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STH410N4F7-2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK-2 Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 365W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V |
auf Bestellung 1095 Stücke: Lieferzeit 10-14 Tag (e) |
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