STH47N60DM6-2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 533-537 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.98 EUR |
| 10+ | 10.12 EUR |
| 25+ | 9.63 EUR |
| 100+ | 9.01 EUR |
| 250+ | 8.54 EUR |
| 500+ | 8.29 EUR |
| 1000+ | 6.21 EUR |
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Technische Details STH47N60DM6-2AG STMicroelectronics
Description: POWER TRANSISTORS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: H2Pak-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STH47N60DM6-2AG
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STH47N60DM6-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 36A Automotive 3-Pin(2+Tab) H2PAK T/R |
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| STH47N60DM6-2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 36A Automotive 3-Pin(2+Tab) H2PAK T/R |
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STH47N60DM6-2AG | Hersteller : STMicroelectronics |
Description: POWER TRANSISTORS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: H2Pak-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STH47N60DM6-2AG | Hersteller : STMicroelectronics |
Description: POWER TRANSISTORS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |