STH6N95K5-2

STH6N95K5-2 STMicroelectronics


en.DM00156940.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.23 EUR
2000+ 2.12 EUR
Mindestbestellmenge: 1000
Produktrezensionen
Produktbewertung abgeben

Technische Details STH6N95K5-2 STMicroelectronics

Description: MOSFET N-CH 950V 6A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V.

Weitere Produktangebote STH6N95K5-2 nach Preis ab 2.63 EUR bis 6.6 EUR

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STH6N95K5-2 STH6N95K5-2 Hersteller : STMicroelectronics en.DM00156940.pdf Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 3532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.7 EUR
10+ 3.9 EUR
100+ 3.1 EUR
500+ 2.63 EUR
Mindestbestellmenge: 4
STH6N95K5-2 STH6N95K5-2 Hersteller : STMicroelectronics sth6n95k5_2-1851003.pdf MOSFET N-channel 950 V, 1 Ohm typ 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
auf Bestellung 450 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.6 EUR
10+ 5.56 EUR
25+ 5.54 EUR
100+ 4.5 EUR
500+ 4 EUR
1000+ 3.41 EUR
2000+ 3.2 EUR
Mindestbestellmenge: 8
STH6N95K5-2 STH6N95K5-2 Hersteller : STMicroelectronics 1425750961924075dm001.pdf Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
STH6N95K5-2 Hersteller : STMicroelectronics 1425750961924075dm001.pdf Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
Produkt ist nicht verfügbar
STH6N95K5-2 Hersteller : STMicroelectronics en.DM00156940.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STH6N95K5-2 Hersteller : STMicroelectronics en.DM00156940.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar