STH6N95K5-2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.02 EUR |
| 2000+ | 1.91 EUR |
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Technische Details STH6N95K5-2 STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V.
Weitere Produktangebote STH6N95K5-2 nach Preis ab 2.04 EUR bis 5.46 EUR
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STH6N95K5-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 6A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 3060 Stücke: Lieferzeit 10-14 Tag (e) |
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STH6N95K5-2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 950 V, 1 Ohm typ 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package |
auf Bestellung 1005 Stücke: Lieferzeit 10-14 Tag (e) |
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| STH6N95K5-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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STH6N95K5-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| STH6N95K5-2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 24A; 110W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 24A Power dissipation: 110W Case: H2PAK-2 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STH6N95K5-2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 24A; 110W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 24A Power dissipation: 110W Case: H2PAK-2 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |