STH80N10LF7-2AG STMicroelectronics

Description: MOSFET N-CH 100V 80A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V, Power Dissipation (Max): 110W (Tc), Supplier Device Package: H2Pak-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Qualification: AEC-Q101.