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STHU32N65DM6AG STMicroelectronics


sthu32n65dm6ag.pdf
Hersteller: STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
600+5.25 EUR
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STHU32N65DM6AG STMicroelectronics

Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: HU3PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote STHU32N65DM6AG nach Preis ab 5.47 EUR bis 9.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STHU32N65DM6AG STHU32N65DM6AG STMicroelectronics sthu32n65dm6ag.pdf Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.03 EUR
10+6.88 EUR
25+6.33 EUR
100+5.75 EUR
250+5.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STHU32N65DM6AG sthu32n65dm6ag.pdf
Hersteller: STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.03 EUR
10+6.88 EUR
25+6.33 EUR
100+5.75 EUR
250+5.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH