STHU32N65DM6AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.88 EUR |
| 10+ | 9.19 EUR |
| 25+ | 8.52 EUR |
| 100+ | 7.78 EUR |
| 250+ | 7.43 EUR |
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Technische Details STHU32N65DM6AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: HU3PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STHU32N65DM6AG nach Preis ab 7.06 EUR bis 12.16 EUR
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STHU32N65DM6AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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STHU32N65DM6AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STHU32N65DM6AG - Leistungs-MOSFET, n-Kanal, 650 V, 37 A, 0.097 ohm, HU3PAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 37A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.75V euEccn: NLR Verlustleistung: 320W Bauform - Transistor: HU3PAK Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.097ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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STHU32N65DM6AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STHU32N65DM6AG - Leistungs-MOSFET, n-Kanal, 650 V, 37 A, 0.097 ohm, HU3PAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 37A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.75V euEccn: NLR Verlustleistung: 320W Bauform - Transistor: HU3PAK Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.097ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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| STHU32N65DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 37A Automotive AEC-Q101 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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| STHU32N65DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 37A Automotive 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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STHU32N65DM6AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: HU3PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |