STHU36N60DM6AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 600 V, 84 mOhm typ., 29 A MDmesh DM6 Power MOSFET
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.72 EUR |
| 10+ | 7.46 EUR |
| 25+ | 6.88 EUR |
| 100+ | 6.27 EUR |
| 250+ | 5.95 EUR |
| 600+ | 5.24 EUR |
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Technische Details STHU36N60DM6AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: HU3PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STHU36N60DM6AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STHU36N60DM6AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STHU36N60DM6AG - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.084 ohm, HU3PAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 210W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: MDmesh DM6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.084ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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STHU36N60DM6AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STHU36N60DM6AG - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.084 ohm, HU3PAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 210W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: MDmesh DM6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.084ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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| STHU36N60DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 29A Automotive 8-Pin(7+Tab) HU3PAK |
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| STHU36N60DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 29A Automotive AEC-Q101 8-Pin(7+Tab) HU3PAK T/R |
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STHU36N60DM6AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: HU3PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STHU36N60DM6AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 600 V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: HU3PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |