STHU65N050DM9AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: AUTOMOTIVE-GRADE N-CHANNEL 650 V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25.5A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 400 V
Qualification: AEC-Q101
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Technische Details STHU65N050DM9AG STMicroelectronics
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V, Packaging: Cut Tape (CT), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25.5A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 400 V, Qualification: AEC-Q101.
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STHU65N050DM9AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE N-CHANNEL 650 V Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25.5A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 400 V Qualification: AEC-Q101 |
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STHU65N050DM9AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET |
Produkt ist nicht verfügbar |