STI24N60M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 1173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.21 EUR |
| 50+ | 2.31 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STI24N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.
Weitere Produktangebote STI24N60M2 nach Preis ab 1.69 EUR bis 4.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STI24N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 |
auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
STI24N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STI24N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
STI24N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ || Plus Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
STI24N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ || Plus |
Produkt ist nicht verfügbar |