STI24N60M2 STMicroelectronics
auf Bestellung 348 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.72 EUR |
| 11+ | 4.76 EUR |
| 100+ | 3.8 EUR |
| 250+ | 3.51 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.7 EUR |
| 2000+ | 2.59 EUR |
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Technische Details STI24N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 18A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.
Weitere Produktangebote STI24N60M2 nach Preis ab 2.62 EUR bis 5.8 EUR
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STI24N60M2 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 18A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
auf Bestellung 2180 Stücke: Lieferzeit 21-28 Tag (e) |
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STI24N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAK Tube |
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| STI24N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAK Tube |
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STI24N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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STI24N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 150W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |