STI33N60M2

STI33N60M2 STMicroelectronics


2178dm00078147.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) I2PAK Tube
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Technische Details STI33N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 26A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V.

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STI33N60M2 Hersteller : STMicroelectronics 2178dm00078147.pdf Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) I2PAK Tube
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STI33N60M2 STI33N60M2 Hersteller : STMicroelectronics en.DM00078147.pdf Description: MOSFET N-CH 600V 26A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
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STI33N60M2 STI33N60M2 Hersteller : STMicroelectronics stf33n60m2-1850852.pdf MOSFET N-channel 600 V, 0.108 Ohm typ 26 A MDmesh M2 Power MOSFETs in I2PAK package
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