STI33N65M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.3 EUR |
10+ | 5.29 EUR |
100+ | 4.28 EUR |
500+ | 3.8 EUR |
1000+ | 3.25 EUR |
2000+ | 3.06 EUR |
5000+ | 2.94 EUR |
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Technische Details STI33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.
Weitere Produktangebote STI33N65M2 nach Preis ab 3.31 EUR bis 6.41 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STI33N65M2 | Hersteller : STMicroelectronics | MOSFET N-channel 650 V, 0.117 Ohm typ 24 A MDmesh M2 Power MOSFET in I2PAK package |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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STI33N65M2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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STI33N65M2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |