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STI33N65M2

STI33N65M2 STMicroelectronics

en.DM00151754.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.3 EUR
50+3.65 EUR
100+3.44 EUR
500+2.83 EUR
1000+2.64 EUR
Mindestbestellmenge: 3
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Technische Details STI33N65M2 STMicroelectronics

Description: MOSFET N-CH 650V 24A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.

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STI33N65M2 STI33N65M2 Hersteller : STMicroelectronics en.DM00151754.pdf MOSFETs N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
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