STI47N60DM6AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.44 EUR |
| 10+ | 8.68 EUR |
| 100+ | 6.35 EUR |
| 500+ | 5.61 EUR |
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Technische Details STI47N60DM6AG STMicroelectronics
Description: POWER TRANSISTORS, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STI47N60DM6AG
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STI47N60DM6AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STI47N60DM6AG - Leistungs-MOSFET, n-Kanal, 600 V, 36 A, 0.07 ohm, I2PAK, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: I2PAK Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh DM6 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| STI47N60DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 36A Automotive 3-Pin(3+Tab) I2PAK Tube |
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| STI47N60DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 36A Automotive 3-Pin(3+Tab) I2PAK Tube |
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STI47N60DM6AG | Hersteller : STMicroelectronics |
Description: POWER TRANSISTORS Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |