STI4N62K3 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Case: I2PAK
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SuperMESH3™
Drain current: 2A
On-state resistance: 2Ω
Gate-source voltage: ±30V
Power dissipation: 70W
Drain-source voltage: 620V
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Version: ESD
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Technische Details STI4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.
Weitere Produktangebote STI4N62K3 nach Preis ab 0.87 EUR bis 3.33 EUR
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STI4N62K3 | STMicroelectronics |
MOSFETs N-channel 620 V 17 Pwr MOSFET |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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| STI4N62K3 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 620 V 17 Pwr MOSFET
MOSFETs N-channel 620 V 17 Pwr MOSFET
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.33 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.87 EUR |