STI4N62K3

STI4N62K3 STMicroelectronics


STD4N62K3.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Case: I2PAK
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SuperMESH3™
Drain current: 2A
On-state resistance:
Gate-source voltage: ±30V
Power dissipation: 70W
Drain-source voltage: 620V
Polarisation: unipolar
Mounting: THT
Kind of channel: enhancement
Version: ESD
auf Bestellung 126 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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Technische Details STI4N62K3 STMicroelectronics

Description: MOSFET N-CH 620V 3.8A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.

Weitere Produktangebote STI4N62K3 nach Preis ab 0.73 EUR bis 2.8 EUR

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STI4N62K3 STI4N62K3 Hersteller : STMicroelectronics en.CD00274723.pdf MOSFETs N-channel 620 V 17 Pwr MOSFET
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.8 EUR
10+1.78 EUR
100+1.19 EUR
500+0.98 EUR
1000+0.82 EUR
2000+0.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STI4N62K3 STI4N62K3 Hersteller : STMicroelectronics en.CD00274723.pdf Description: MOSFET N-CH 620V 3.8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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