STL100N10F7 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
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Technische Details STL100N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V, Power Dissipation (Max): 5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V.
Weitere Produktangebote STL100N10F7 nach Preis ab 1.81 EUR bis 5.84 EUR
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STL100N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V Power Dissipation (Max): 5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V |
auf Bestellung 13484 Stücke: Lieferzeit 10-14 Tag (e) |
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STL100N10F7 | STMicroelectronics |
MOSFETs N-Ch 100V 0.0062 Ohm 19A STripFET VII DG |
auf Bestellung 2957 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL100N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 80A; 5W; PowerFLAT 5x6 Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 80A Power dissipation: 5W Case: PowerFLAT 5x6 Gate-source voltage: 20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL100N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
Description: MOSFET N-CH 100V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 19A, 10V
Power Dissipation (Max): 5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 50 V
auf Bestellung 13484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 2.03 EUR |
| STL100N10F7 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 100V 0.0062 Ohm 19A STripFET VII DG
MOSFETs N-Ch 100V 0.0062 Ohm 19A STripFET VII DG
auf Bestellung 2957 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.84 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 2.05 EUR |
| 3000+ | 1.92 EUR |
| STL100N10F7 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 5W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 5W
Case: PowerFLAT 5x6
Gate-source voltage: 20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 5W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 5W
Case: PowerFLAT 5x6
Gate-source voltage: 20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.81 EUR |