STL100N6LF6

STL100N6LF6 STMicroelectronics


en.CD00002234-1219656.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS
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Technische Details STL100N6LF6 STMicroelectronics

Description: MOSFET N CH 60V 100A PWRFLAT 5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V, Power Dissipation (Max): 4.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.

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STL100N6LF6 STL100N6LF6 Hersteller : STMicroelectronics STL100N6LF6.pdf Description: MOSFET N CH 60V 100A PWRFLAT 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
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