STL10LN80K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
| Anzahl | Preis |
|---|---|
| 1+ | 6.07 EUR |
| 10+ | 3.98 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.6 EUR |
| 1000+ | 2.31 EUR |
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Technische Details STL10LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 6A PWRFLAT VHV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 4A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6) VHV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V.
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STL10LN80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 6A PWRFLAT VHV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 4A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) VHV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V |
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