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STL10N65M2

STL10N65M2 STMicroelectronics

stl10n65m2.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.6 EUR
Mindestbestellmenge: 3000
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Technische Details STL10N65M2 STMicroelectronics

Description: MOSFET N-CH 650V 4.5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.

Weitere Produktangebote STL10N65M2 nach Preis ab 1.54 EUR bis 3.9 EUR

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STL10N65M2 STL10N65M2 Hersteller : STMicroelectronics stl10n65m2.pdf Description: MOSFET N-CH 650V 4.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
10+ 3.17 EUR
100+ 2.46 EUR
500+ 2.09 EUR
1000+ 1.7 EUR
Mindestbestellmenge: 7
STL10N65M2 STL10N65M2 Hersteller : STMicroelectronics stl10n65m2-1851215.pdf MOSFET N-channel 650 V, 0.85 Ohm typ 4.5 A MDmesh M2 Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.9 EUR
17+ 3.2 EUR
100+ 2.49 EUR
500+ 2.11 EUR
1000+ 1.71 EUR
3000+ 1.61 EUR
6000+ 1.54 EUR
Mindestbestellmenge: 14
STL10N65M2 Hersteller : STMicroelectronics stl10n65m2.pdf Trans MOSFET N-CH 650V 4.5A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
STL10N65M2 Hersteller : STMicroelectronics stl10n65m2.pdf Trans MOSFET N-CH 650V 4.5A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar