STL11N3LLH6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 11A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 24 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.59 EUR |
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Technische Details STL11N3LLH6 STMicroelectronics
Description: MOSFET N-CH 30V 11A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 5.5A, 10V, Power Dissipation (Max): 2W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 24 V.
Weitere Produktangebote STL11N3LLH6 nach Preis ab 0.52 EUR bis 2.25 EUR
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STL11N3LLH6 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 30V 0.006 Ohm 11A STripFET VI Deep |
auf Bestellung 3140 Stücke: Lieferzeit 10-14 Tag (e) |
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STL11N3LLH6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 11A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 24 V |
auf Bestellung 3876 Stücke: Lieferzeit 10-14 Tag (e) |
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