STL11N4LLF5

STL11N4LLF5 STMicroelectronics


STL11N4LLF5.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 11A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke:

Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STL11N4LLF5 STMicroelectronics

Description: MOSFET N-CH 40V 11A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.9W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote STL11N4LLF5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STL11N4LLF5 STL11N4LLF5 Hersteller : STMicroelectronics STL11N4LLF5.pdf Description: MOSFET N-CH 40V 11A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH