STL11N65M2 STMicroelectronics

Description: MOSFET N-CH 650V POWERFLAT 5X5 H, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V.