STL120N2VH5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 120A POWERFLAT
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
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Technische Details STL120N2VH5 STMicroelectronics
Description: MOSFET N-CH 20V 120A POWERFLAT, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 2.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V.