STL12N10F7 STMicroelectronics


stl12n10f7.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 100V 44A 8-Pin Power Flat EP T/R
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Technische Details STL12N10F7 STMicroelectronics

Description: MOSFET N-CH 100V 44A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 13.3mOhm @ 6A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 50 V.

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STL12N10F7 STL12N10F7 Hersteller : STMicroelectronics stl12n10f7.pdf Description: MOSFET N-CH 100V 44A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 50 V
Produkt ist nicht verfügbar
STL12N10F7 STL12N10F7 Hersteller : STMicroelectronics stl12n10f7.pdf Description: MOSFET N-CH 100V 44A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 50 V
Produkt ist nicht verfügbar
STL12N10F7 STL12N10F7 Hersteller : STMicroelectronics stl12n10f7-1479670.pdf MOSFET N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
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