STL160N4F7 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 16A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
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Technische Details STL160N4F7 STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 16A, 10V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V.
Weitere Produktangebote STL160N4F7 nach Preis ab 0.69 EUR bis 2.94 EUR
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STL160N4F7 | Hersteller : STMicroelectronics |
MOSFETs N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 |
auf Bestellung 4225 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL160N4F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 8-Pin Power Flat EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL160N4F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 8-Pin Power Flat EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL160N4F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 8-Pin Power Flat EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL160N4F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 8-Pin Power Flat EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STL160N4F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 16A, 10V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STL160N4F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 40V; 120A; 111W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 111W Case: PowerFLAT 5x6 On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 29nC Kind of channel: enhancement Technology: STripFET™ |
Produkt ist nicht verfügbar |