STL16N65M2

STL16N65M2 STMicroelectronics


en.DM00141948.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
auf Bestellung 1340 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.8 EUR
10+3.1 EUR
100+2.2 EUR
500+1.78 EUR
1000+1.71 EUR
3000+1.45 EUR
6000+1.43 EUR
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Technische Details STL16N65M2 STMicroelectronics

Description: MOSFET N-CH 650V 7.5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V.

Weitere Produktangebote STL16N65M2 nach Preis ab 1.49 EUR bis 4.84 EUR

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STL16N65M2 STL16N65M2 Hersteller : STMicroelectronics en.DM00141948.pdf Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 1665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.14 EUR
100+2.17 EUR
500+1.76 EUR
1000+1.7 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STL16N65M2 Hersteller : STMicroelectronics en.DM00141948.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.5A; 56W
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 56W
Gate-source voltage: 25V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.49 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
STL16N65M2 STL16N65M2 Hersteller : STMicroelectronics en.DM00141948.pdf Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
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