STL16N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.82 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 2.03 EUR |
| 3000+ | 1.73 EUR |
| 6000+ | 1.7 EUR |
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Technische Details STL16N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V.
Weitere Produktangebote STL16N65M2 nach Preis ab 1.77 EUR bis 5.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STL16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 7.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 1665 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL16N65M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 650V; 7.5A; 56W Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 7.5A Power dissipation: 56W Gate-source voltage: 25V Mounting: SMD Kind of channel: enhancement Gate charge: 19.5nC |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL16N65M2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 1665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 2.03 EUR |
| STL16N65M2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.5A; 56W
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 56W
Gate-source voltage: 25V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.5A; 56W
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 56W
Gate-source voltage: 25V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.77 EUR |