STL190N4F7AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 40 V, 1.68 mOhm typ 120 A STripFET F7 Power MOSFET
| Anzahl | Preis |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.09 EUR |
| 250+ | 2.08 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.72 EUR |
| 3000+ | 1.66 EUR |
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Technische Details STL190N4F7AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 127W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL190N4F7AG nach Preis ab 1.9 EUR bis 5.21 EUR
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STL190N4F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 17.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 807 Stücke: Lieferzeit 10-14 Tag (e) |
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STL190N4F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
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