STL19N3LLH6AG STMicroelectronics
Hersteller: STMicroelectronics
Description: DISCRETE
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
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Technische Details STL19N3LLH6AG STMicroelectronics
Description: DISCRETE, Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk.
Weitere Produktangebote STL19N3LLH6AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL19N3LLH6AG | Hersteller : STMicroelectronics |
 MOSFETs Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package |
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