Technische Details STL19N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 12.5A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 90W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL19N65M5
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STL19N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 12.5A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.8W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerVDFN Packaging: Tape & Reel (TR) |
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