STL210N4LF7AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.71 EUR |
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Technische Details STL210N4LF7AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STL210N4LF7AG nach Preis ab 1.83 EUR bis 5.39 EUR
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STL210N4LF7AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 1.3 mOhm typ 120 A STripFET F7 Power MOSFET |
auf Bestellung 2070 Stücke: Lieferzeit 10-14 Tag (e) |
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STL210N4LF7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3006 Stücke: Lieferzeit 10-14 Tag (e) |
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STL210N4LF7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 8-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| STL210N4LF7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Version: Automotive Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STL210N4LF7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Version: Automotive |
Produkt ist nicht verfügbar |