STL21N65M5 STMicroelectronics
auf Bestellung 1449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 3.96 EUR |
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Technische Details STL21N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 17A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Weitere Produktangebote STL21N65M5 nach Preis ab 3.89 EUR bis 4.47 EUR
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STL21N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 17A 4-Pin Power Flat EP T/R |
auf Bestellung 1449 Stücke: Lieferzeit 14-21 Tag (e) |
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STL21N65M5 | Hersteller : STMicroelectronics |
MOSFETs Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID) |
auf Bestellung 2742 Stücke: Lieferzeit 10-14 Tag (e) |
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STL21N65M5 Produktcode: 106076
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Lieblingsprodukt
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Hersteller : STMicroelectronics |
Transistoren > MOSFET N-CH |
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STL21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 5-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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| STL21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 5-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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STL21N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 17A 4-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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| STL21N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 68A Gate charge: 44nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STL21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL21N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 17A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STL21N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 68A Gate charge: 44nC |
Produkt ist nicht verfügbar |