STL23NS3LLH7 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET N-channel 30 V, 0.0027 Ohm typ., 23 A STripFET(TM) VII DeepGATE(TM) Power MOSFET plus monolithic Schottky in a PowerFLAT(TM) 3.3 x 3.3
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Technische Details STL23NS3LLH7 STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (3.3x3.3), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 2.9W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL23NS3LLH7
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STL23NS3LLH7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) |
Produkt ist nicht verfügbar |
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STL23NS3LLH7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
