STL25N60M2-EP STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 16A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
auf Bestellung 2837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.83 EUR |
| 10+ | 3.82 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.37 EUR |
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Technische Details STL25N60M2-EP STMicroelectronics
Description: MOSFET N-CH 600V 16A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V.
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Verfügbarkeit |
Preis |
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STL25N60M2-EP | Hersteller : STMicroelectronics |
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STL25N60M2-EP | Hersteller : STMicroelectronics |
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| STL25N60M2-EP | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 64A Mounting: SMD Case: PowerFLAT 8x8 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.205Ω Anzahl je Verpackung: 1 Stücke |
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STL25N60M2-EP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 16A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V |
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STL25N60M2-EP | Hersteller : STMicroelectronics |
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| STL25N60M2-EP | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 64A Mounting: SMD Case: PowerFLAT 8x8 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.205Ω |
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