STL25N60M2-EP STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 16A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.68 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.61 EUR |
| 500+ | 2.31 EUR |
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Technische Details STL25N60M2-EP STMicroelectronics
Description: MOSFET N-CH 600V 16A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V.
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