STL26NM60N STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 19A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 125mW (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.94 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.45 EUR |
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Technische Details STL26NM60N STMicroelectronics
Description: MOSFET N-CH 600V 19A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V, Power Dissipation (Max): 125mW (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Weitere Produktangebote STL26NM60N nach Preis ab 4.1 EUR bis 8.41 EUR
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STL26NM60N | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600V 0.160 Ohm 19A HV Mdmesh II |
auf Bestellung 2119 Stücke: Lieferzeit 10-14 Tag (e) |
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STL26NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 600V 19A 5-Pin Power Flat T/R |
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STL26NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 600V 19A 4-Pin Power Flat EP T/R |
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STL26NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 600V 19A 4-Pin Power Flat EP T/R |
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| STL26NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 600V 19A 5-Pin Power Flat T/R |
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| STL26NM60N | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 60nC Pulsed drain current: 76A Anzahl je Verpackung: 1 Stücke |
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STL26NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 19A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Power Dissipation (Max): 125mW (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
Produkt ist nicht verfügbar |
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| STL26NM60N | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 60nC Pulsed drain current: 76A |
Produkt ist nicht verfügbar |