STL285N4F7AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 40V 120A 8-Pin Power Flat EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details STL285N4F7AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 24A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V.
Weitere Produktangebote STL285N4F7AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STL285N4F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 24A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
STL285N4F7AG | Hersteller : STMicroelectronics | MOSFETs Automotive-grade N-channel 40 V, 0.9 mOhm typ., 120 A STripFET F7 Power MOSFET i |
Produkt ist nicht verfügbar |
|
| STL285N4F7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |