STL300N4LF8 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.59 EUR |
| 3000+ | 1.43 EUR |
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Technische Details STL300N4LF8 STMicroelectronics
Description: POWER FLAT 8L 6X5X1 P1.27, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Weitere Produktangebote STL300N4LF8 nach Preis ab 1.63 EUR bis 4.42 EUR
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STL300N4LF8 | Hersteller : STMicroelectronics |
Description: POWER FLAT 8L 6X5X1 P1.27 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
auf Bestellung 2936 Stücke: Lieferzeit 10-14 Tag (e) |
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STL300N4LF8 | Hersteller : STMicroelectronics |
Description: POWER FLAT 8L 6X5X1 P1.27 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
Produkt ist nicht verfügbar |