STL31N65M5 STMicroelectronics
auf Bestellung 2936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.70 EUR |
| 10+ | 3.96 EUR |
| 100+ | 3.26 EUR |
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Technische Details STL31N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT88, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V, Power Dissipation (Max): 2.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V.
Weitere Produktangebote STL31N65M5 nach Preis ab 3.80 EUR bis 4.75 EUR
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STL31N65M5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 15A PWRFLAT88Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
auf Bestellung 2160 Stücke: Lieferzeit 10-14 Tag (e) |
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STL31N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 2.8A 5-Pin Power Flat T/R |
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| STL31N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 2.8A 5-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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| STL31N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 162mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STL31N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 15A PWRFLAT88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STL31N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 162mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |