STL31N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.71 EUR |
| 10+ | 5.12 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.49 EUR |
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Technische Details STL31N65M5 STMicroelectronics
Description: STMICROELECTRONICS - STL31N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.162 ohm, PowerFLAT HV, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 15A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 125W, Bauform - Transistor: PowerFLAT HV, Anzahl der Pins: 4Pin(s), Produktpalette: MDmesh V Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.162ohm, SVHC: No SVHC (05-Nov-2025).
Weitere Produktangebote STL31N65M5 nach Preis ab 3.08 EUR bis 8.36 EUR
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STL31N65M5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5 |
auf Bestellung 2921 Stücke: Lieferzeit 10-14 Tag (e) |
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STL31N65M5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL31N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.162 ohm, PowerFLAT HV, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerFLAT HV Anzahl der Pins: 4Pin(s) Produktpalette: MDmesh V Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.162ohm SVHC: No SVHC (05-Nov-2025) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STL31N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 15A PWRFLAT88 Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STL31N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W Case: PowerFLAT 8x8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 45nC On-state resistance: 162mΩ Drain current: 15A Gate-source voltage: ±25V Pulsed drain current: 60A Power dissipation: 125W Drain-source voltage: 650V Kind of channel: enhancement |
Produkt ist nicht verfügbar |