STL33N65M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details STL33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V.
Weitere Produktangebote STL33N65M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
STL33N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 20A PWRFLAT HVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
STL33N65M2 | Hersteller : STMicroelectronics |
MOSFET N-channel 650 V, 0.124 Ohm typ 20 A MDmesh M2 Power MOSFET |
Produkt ist nicht verfügbar |
|
| STL33N65M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 150W Mounting: SMD Case: PowerFLAT 8x8 Kind of package: reel; tape On-state resistance: 154mΩ Drain current: 20A Gate-source voltage: ±25V Power dissipation: 150W Pulsed drain current: 80A Drain-source voltage: 650V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41.5nC |
Produkt ist nicht verfügbar |
