STL33N65M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details STL33N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL33N65M2
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STL33N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 20A PWRFLAT HV Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 154mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
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STL33N65M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.124 Ohm typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 |
Produkt ist nicht verfügbar |
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| STL33N65M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 150W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 650V Gate-source voltage: ±25V Drain current: 20A Gate charge: 41.5nC On-state resistance: 154mΩ Power dissipation: 150W Pulsed drain current: 80A Case: PowerFLAT 8x8 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |