STL35N15F3

STL35N15F3 STMicroelectronics


STL35N15F3.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
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Technische Details STL35N15F3 STMicroelectronics

Description: MOSFET N-CH 150V 33A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V.