STL36N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 9.91 EUR |
| 10+ | 6.66 EUR |
| 100+ | 4.81 EUR |
| 500+ | 4.47 EUR |
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Technische Details STL36N60M6 STMicroelectronics
Description: STMICROELECTRONICS - STL36N60M6 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.11 ohm, PowerFLAT HV, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 25A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.75V, euEccn: NLR, Verlustleistung: 160W, Bauform - Transistor: PowerFLAT HV, Anzahl der Pins: 4Pin(s), Produktpalette: MDmesh M6 Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.11ohm, SVHC: No SVHC (05-Nov-2025).
Weitere Produktangebote STL36N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL36N60M6 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL36N60M6 - Leistungs-MOSFET, n-Kanal, 600 V, 25 A, 0.11 ohm, PowerFLAT HV, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.75V euEccn: NLR Verlustleistung: 160W Bauform - Transistor: PowerFLAT HV Anzahl der Pins: 4Pin(s) Produktpalette: MDmesh M6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (05-Nov-2025) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STL36N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 25A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL36N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 91 mOhm typ., 25 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV |
Produkt ist nicht verfügbar |
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| STL36N60M6 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 100A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 100A Power dissipation: 160W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 44.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |