STL3NM60N STMicroelectronics
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 136+ | 1.08 EUR |
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Technische Details STL3NM60N STMicroelectronics
Description: MOSFET N-CH 600V 0.65A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 2W (Ta), 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V.
Weitere Produktangebote STL3NM60N nach Preis ab 1.08 EUR bis 4.72 EUR
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STL3NM60N | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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STL3NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 0.65A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STL3NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 0.65A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V |
auf Bestellung 7656 Stücke: Lieferzeit 10-14 Tag (e) |
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STL3NM60N | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600V 1.5Ohm 2.2A MDMesh II MOS |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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STL3NM60N Produktcode: 130677
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STL3NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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| STL3NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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STL3NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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STL3NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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| STL3NM60N | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 22W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±25V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9.5nC Pulsed drain current: 2.6A |
Produkt ist nicht verfügbar |