Technische Details STL45N65M5 STM
Description: MOSFET N-CH 650V 22.5A PWRFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc), Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V, Power Dissipation (Max): 2.8W (Ta), 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFLAT™ (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V.
Weitere Produktangebote STL45N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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STL45N65M5 | STMicroelectronics |
 Description: MOSFET N-CH 650V 22.5A PWRFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V Power Dissipation (Max): 2.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFLAT™ (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STL45N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 22.5A PWRFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V Power Dissipation (Max): 2.8W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFLAT™ (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STL45N65M5 | STMicroelectronics |
MOSFETs N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STL45N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STL45N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 22.5A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 86mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFLAT™ (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL45N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
MOSFETs N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH